ABB 5SHY35L4510 Asymmetric Integrated Gate-Commutated Thyristor

ABB 5SHY35L4510 is an asymmetric integrated gate-commutated thyristor (AS-GCT) with the following features and application scenarios:

Structure and Principle

AS-GCT is a p+nn-pn+ five-layer asymmetric thyristor structure. The p+ anode region is a shallow medium-doped region, called a transparent anode. There is a low-doped n-type field stop (FS) layer between the n-base region and the p+ transparent anode region, which compresses the electric field strength.

It is composed of an AS-GCT and a pn-nn+ diode in anti-parallel connection. The pnp structure is used between the AS-GCT and the integrated diode to achieve junction isolation, which can effectively reduce leakage current.

It is symmetrical up and down with the n-base region as the center, and has two gates. This structure consists of two dual transistors with two different base regions. The use of dual gates is conducive to improving the turn-off speed and operating temperature of the device.

Performance characteristics

High voltage and high current capability: It can withstand high voltage and high current, and is suitable for high voltage and high current power electronic applications, such as high voltage DC transmission, large capacity motor drive, etc.

Low switching loss: Compared with single gate GCT, the turn-off loss can be reduced by 70%, which helps to improve the efficiency and performance of the system and reduce the heat dissipation requirements.

Fast switching speed: With a faster switching speed, it can achieve high frequency switching operation, which is suitable for power electronic circuits that require fast response, such as inverters, active filters, etc.

High operating junction temperature: The operating junction temperature can be as high as 160℃ at 6kV, with good thermal stability, and can work stably in high temperature environment.

Technical parameters

Off-state repetitive peak voltage UDRM: The maximum repetitive voltage that IGCT can withstand in the blocking state.

Maximum on-state average current IT (AV) M: The maximum average current allowed by IGCT when the sine half-wave current and the shell temperature Tc = 85℃.

Maximum on-state current effective value IT (RMS): The maximum current effective value allowed by the IGCT when the sine half-wave current and the shell temperature Tc = 85℃.

Surge current ITSM: Caused by abnormal circuit conditions and causing the junction temperature to exceed the rated non-repetitive maximum forward overload current.

On-state voltage drop UT: The IGCT on-state tube voltage drop measured at the specified on-state current.

Application scenarios

High-voltage direct current transmission: used for converter valves in high-voltage direct current transmission systems to achieve conversion between AC and DC.

Industrial motor drive: In the variable frequency speed regulation system of large industrial motors, as a power switching device, it controls the operation of the motor.

Power system reactive power compensation: Applied to reactive power compensation devices such as static VAR compensators (SVCs) and static synchronous compensators (STATCOMs) to adjust the reactive power of the power system and improve the quality of power.

New energy power generation: In the field of new energy power generation such as wind power generation and photovoltaic power generation, it is used in equipment such as converters to achieve power conversion and grid connection.